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Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice J. Appl. Phys. 112, 063512 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.

A thin-film solar cell based on a Cu 2 ZnSnS 4 (CZTS) absorber layer deposited by pulsed laser deposition has been fabricated with an Al:ZnO (n-type) window layer and a CdS buffer layer. Some peaks attributed to ( 112), ( 200), ( 220), and (312) planes of CZTS appeared in an X-ray diffraction pattern of a thin film. The composition of the film was Sn-rich and the band gap energy was approximately 1.5 eV. A CZTS film annealed at 500 C in an atmosphere of N 2 had optical characteristics suitable for use in an absorber layer of a thin-film solar cell and was used for a solar cell. The CZTS thin-film solar cell with an active area of 0.092 cm 2 showed an open-circuit voltage of 546 mV, a short-circuit current of 6.78 mA/cm 2 , a fill factor of 0.48, and a conversion efficiency of 1.74%.