The wide applicability of capacitively coupled plasma (CCP) deposition has increased the interest in developing comprehensive numerical models, but CCP imposes a tremendous computational cost when conducting a transient analysis in a three-dimensional (3D) model which reflects the real geometry of reactors. In particular, the detailed flow features of reactive gases induced by 3D geometric effects need to be considered for the precise calculation of radical distribution of reactive species. Thus, an alternative inclusive method for the numerical simulation of CCP deposition is proposed to simulate a two-dimensional (2D) CCP model based on the 3D gas flow results by simulating flow, temperature, and species fields in a 3D space at first without calculating the plasma chemistry. A numerical study of a cylindrical showerhead-electrode CCP reactor was conducted for particular cases of SiH 4 /NH 3 /N 2 /He gas mixture to deposit a hydrogenated silicon nitride (SiN x H y ) film. The proposed methodology produces numerical results for a 300 mm wafer deposition reactor which agree very well with the deposition rate profile measured experimentally along the wafer radius.

To achieve rapid, uniform deposition of an amorphous hydrogenated silicon (a-Si:H) film, a capacitively coupled plasma (CCP) is often used at an intermediate pressure (>100 Pa), with a silane (SiH 4 )-based mixture. At these pressures, heavy particle interactions (such as ion-ion, ion-neutral, and neutral-neutral reactions) contribute significantly to the formation of precursor radicals. By adding a consideration of the thermal diffusion effects to the neutral transport equation, the chemical processes have been numerically analyzed with variation in the number fraction of SiH 4 and electrode spacing using a two-dimensional fluid model of radio frequency discharges in a cylindrically symmetric CCP reactor. The non-uniformity of the deposition rate profiles increases consistently as electrode spacing increases, although the non-uniformity of the plasma parameters decreases with the increase of electrode spacing. The simulated deposition rate profiles match well with the experimental data for the change of electrode spacing. Based on the validation of our model, we propose predictive designs to potentially improve the reactor and process by modifying the thermal and electrical surface conditions.

Semiconductor fabrication often requires the deposition of hydrogenated silicon nitride (SiNxHy) film using SiH4/NH3/N2/He capacitively coupled plasma (CCP) discharge. As analysis of the discharge geometry is essential to understanding CCP deposition, the effect of electrode spacing on the two-dimensional distributions of electrons, ions, and metastable and radical molecules was analyzed numerically using a fluid model. The simulation shows that the spatial variations in the ionization rates near the sheath become more obvious as the electrode spacing increases. In addition, as molecule-molecule gas-phase reactions are significantly affected by the local residence time, large electrode spacings are associated with significant volumetric losses for positive ions. Consequently, an increase of the electrode spacing leads axial density profiles of ions to change from bell shaped to double humped. However, NH4+ persistently maintains a bell-shaped axial density profile regardless of the degree of electrode spacing. We set the mole fraction of NH3 to only 1% of the total flow at the inlet, but NH4+ is the most abundant positive ion at the large electrode spacings. As the gas flow can transport the radicals around the space between the electrodes, we found that radical density distribution shifts toward the grounded electrode. The shift becomes pronounced as the electrode spacing increases. Finally, to validate our model, we compared the calculated deposition rate profile with the experimental data obtained along the wafer radius. According to our numerical results, the SiNxHy deposition rate decreases by approximately 16% when the electrode spacing increases from 9 to 20 mm.

This study examined the effects of Korean red ginseng (KRG) on obese women and aimed to confirm that the effects of KRG on obesity differ dependently on a gene. Fifty obese women were recruited and randomized to receive KRG (n=24) or placebo (n=26) for 8 wk. Measurements of blood pressure, height, weight, waist circumference, waist-hip ratio (WHR), total fat mass, percentage of body fat, resting metabolic rate, basal body temperature, and daily food intake (FI), blood test (serum lipid, liver and renal function), Korean version of obesity-related quality of life scale (KOQOL), and a gene examination were performed. Comparisons of subjects before and after the administration of KRG revealed significant improvements of obesity in terms of weight, body mass index (BMI), WHR, FI, and KOQOL. However, in the comparison between KRG group and placebo group, only KOQOL was significantly different. KRG displayed significant efficacy on BMI and KOQOL in the CT genotype of the G protein beta 3 gene, but not in the CC genotype, on blood sugar test in the Trp64/Arg genotype of the beta 3 adrenergic receptor gene, but not in Trp64/ Trp genotype, on KOQOL in the DD genotype of the angiotensin I converting enzyme gene, but not in the ID and DD genotypes. The effects of KRG on obesity were confirmed to some extent. However, a distinct effect compared to placebo was not confirmed. KRG is more effective for improving the secondary issues of the quality of life derived from obesity rather than having direct effects on the obesity-related anthropometric assessment and blood test indices.

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