Keywords: Acetylides / Copper / N ligands / ZincThe reaction of the lithium β-diketoiminate complex (dipp)NacNacLi·OEt 2 {(dipp)NacNac = 2-[(2,6-diisopropylphenyl)amino]-4-[(2,6-diisopropylphenyl)imino]pent-2-enyl} with ZnCl 2 yielded the corresponding (dipp)NacNacZnCl (1) and (dipp)NacNacZn(µ-Cl) 2 Li(OEt 2 ) 2 (1a). Treatment of 1 with LiCϵCPh and NaBH 4 in diethyl ether gave (dipp)NacNacZnCϵCPh (2) and (dipp)NacNacZn(µ-H) 2 BH 2 (3). The core element of compounds 1a−3 is a six-membered ZnN 2 C 3 ring. The structure of 1a shows the β-diketoiminate backbone in a boat conformation with the tetrahedrally coordinated metal centre in 1a at the prow and the opposing carbon atom at the stern. The zinc atoms in 2 and 3 show a planar

The 3,5-di-tert-butylpyrazolato (3,5-tBu(2)pz) derivatives of aluminum [(eta(1),eta(1)-3,5-tBu(2)pz)(mu-Al)R(1)R(2)](2) (R(1) = R(2) = Me 1; R(1) = R(2) = Et, 2; R(1) = R(2) = Cl, 3; R(1) = R(2) = I, 4; [(eta(2)-3,5-tBu(2)pz)(3)Al], 5; [Al(2)(eta(1),eta(1)-3,5-tBu(2)pz)(2)(mu-E)(C triple bond CPh)(2)] (E = S (6), Se (7), Te (8)) have been prepared in good yield. Compounds 1 and 2 were obtained by the reactions of H[3,5-tBu(2)pz] with Me(3)Al and Et(3)Al, respectively. Reaction of [(eta(1),eta(1)-3,5-tBu(2)pz)(mu-Al)H(2)](2) with the pyrazole H[3,5-tBu(2)pz] gave [(eta(2)-3,5-tBu(2)pz)(3)Al] (5). The reaction of [(eta(1),eta(1)-3,5-tBu(2)pz)(mu-Al)R(2)](2) (R = H, Me) and I(2) yielded 4, while the reaction of 1 equiv of K[3,5-tBu(2)pz] and AlCl(3) afforded 3. In addition, the reaction of [Al(2)(eta(1),eta(1)-3,5-tBu(2)pz)(2)(mu-E)H(2)] and HC triple bond CPh gave 6, 7, and 8. All compounds have been characterized by elemental analysis, NMR, and mass spectroscopy. The molecular structure analyses of compounds 1, 3, 6, and 7 by X-ray crystallography showed that complexes 1 and 3 are dimeric with two eta(1),eta(1)-pyrazolato groups in twisted conformation while 6 and 7 with two eta(1),eta(1)-pyrazolato groups display a boat conformation.

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Dedicated to Professor Guy Ourisson on the occasion of his 75th birthday In 2 O 3 films have been grown on polycrystalline Al 2 O 3 using low-pressure metal±organic (LP-MO) CVD in the temperature range 250±400 C with the new single-source precursors [Et 2 InOH´Et 2 InNH 2 ] (1) and [ i Pr 2 InOH´iPr 2 InNH 2 ] (2), using a purified nitrogen stream as the carrier gas. The preparation and properties of compounds 1 and 2 are reported. X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible (UV-vis) spectroscopy, and energy dispersive X-ray (EDX) spectrometric analyses were used to characterize the films.

-In 2 O 3 films are grown on polycrystalline Al 2 O 3 by low-pressure metal-organic CVD in the temperature range 250-400 • C from compounds (IVa) and (IVb) as new single-source precursors using purified N 2 as the carrier gas. The films are characterized by XRD, UV/VIS spectroscopy, SEM, and EDX. The thickness of the films ranges from 400 to 600 nm. The film grown from precursor (IVa) shows no impurities and the film grown using precursor (IVb) shows only Al as main impurity.