As the unavoidable byproducts of alcoholic fermentation, higher alcohols are unhealthy compounds widespread in alcoholic drinks. To investigate the activity of apple crude enzymes toward higher alcohols in liquors, five kinds of apple peels, namely, Fuji, Gala, Golden Delicious, Red Star, and Jonagold, were chosen to prepare enzymes, and three kinds of Chinese liquors, namely, Xifeng (containing 45% ethanol), Taibai (containing 50% ethanol), and Erguotou (containing 56% ethanol), were tested. Enzymes were prepared in the forms of liquid solution, powder, and immobilized enzymes using sodium alginate (SA) and chitosan. The treatment was carried out at 37 °C for 1 h. The relative amounts of different alcohols (including ethanol, 1-propanol, isobutanol, 1-butanol, isoamylol, and 1-hexanol) were measured using gas chromatography (GC). Conditions for preparing SA-immobilized Fuji enzymes (SA-IEP) were optimized, and the obtained SA-IEP (containing 0.3 g of enzyme) was continuously used to treat Xifeng liquor eight times, 20 mL per time. Significant degradation rates (DRs) of higher alcohols were observed at different degrees, and it also showed enzyme specificity according to the apple varieties and enzyme preparations. After five repeated treatments, the DRs of the optimized Fuji SA-IEP remained 70% for 1-hexanol and >15% for other higher alcohols.

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A HfO 2 /n-InAlAs MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in InAs/AlSb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of HfO 2 /n-InAlAs MOS-capacitor samples with different HfO 2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of HfO 2 layer is enhanced and the InAlAs-HfO 2 interface trap density D it is reduced, leading to an effective reduction of the leakage current. It is found that the HfO 2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO 2 /n-InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.

Based on restricted variational principle, a novel method for interval wavelet construction is proposed. For the excellent local property of quasi-Shannon wavelet, its interval wavelet is constructed, and then applied to solve ordinary differential equations. Parameter choices for the interval wavelet method are discussed and its numerical performance is demonstrated.