The single molecular conductance of viologen derivative VSMe and supramolecular compound VSMe-PA[5] (pillararene[5]) was investigated. The difference of their conductance demonstrated the gating effect of cation-π interaction. Theoretical calculations showed...

The chemical identity of anchoring groups has a great impact on the charge transport in single-molecule junctions. In this paper, a new πconjugated anchoring group, thiazole, with a built-in quantum interference (QI) feature for Au−molecule−Au junction is reported. The charge transport properties of thiazole-end-capped conjugated molecules are investigated by the scanning tunneling microscopy break junction (STMBJ) technique. Experimental results show that the conductance of junctions changes distinctly with the substitution positions of thiazole, which is ascribed to the quantum interference and the change of coupling strength between molecule and electrodes. Notably, the conductance change reaches 331 times, much higher than that of benchmark anchoring group pyridine-terminated molecules. X-ray photoelectron spectroscopy (XPS) experiments and DFT calculations confirm that Au−N and Au−π interactions co-serve as anchoring sources, and the coupling strength between thiazole anchor and electrodes is tunable. These results highlight the built-in QI feature of thiazole anchor and enrich the self-decoupling strategies for conjugated molecules.

The understanding of charge transport at single-molecule level is a pre-requisite for the fabrication of molecular devices. Here, we systematically investigate the relation among molecular conductance, substitution pattern and stimuli...

The molecular conductance of 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyano-quinodimethane (F4TCNQ) with different electronic states (neutral, radical anion, and dianion) were investigated by scanning tunneling microscope break junction (STM-BJ) technique. These electronic states have distinct...

Furan-containing quinoidal compounds FTzTzF-C10 and FTzTzF-C8 were synthesized. These compounds have low lowest unoccupied molecular orbital (LUMO) energy levels and can form a charge transfer complex with Ag and Cu films, proved by cyclic voltammograms and Raman spectra. Single crystal diffraction results reveal that they adopt a lamellar layer structure with strong π−π interactions in crystals. Thin film transistor characterization shows that FTzTzF-C10 and FTzTzF-C8 exhibit n-channel behavior with an electron mobility of 1.18 cm 2 V −1 s −1 , one of the highest electron mobilities reported for thin film devices based on furan-containing semiconductors. Notably, the performance of FTzTzF-C10 and FTzTzF-C8 devices is nearly independent of the metals (Au, Cu, and Ag) of source−drain electrodes, which is ascribed to the ultrathin charge transfer layer formed by the spontaneous reaction of FTzTzFs and electrodes (Ag, Cu). These results demonstrate that furan is an excellent block for quinoidal semiconductors and promote the development of Cu/Ag electrode-based organic transistors.