This paper presents the design, simulation, fabrication and experiments of a micromachined z-axis tunneling magnetoresistive accelerometer with electrostatic force feedback. The tunneling magnetoresistive accelerometer consists of two upper differential tunneling magnetoresistive sensors, a middle plane main structure with permanent magnetic films and lower electrostatic feedback electrodes. A pair of lever-driven differential proof masses in the middle plane main structure is used for sensitiveness to acceleration and closed-loop feedback control. The tunneling magnetoresistive effect with high sensitivity is adopted to measure magnetic field variation caused by input acceleration. The structural mode and mass ratio between inner and outer proof masses are optimized by the Ansys simulation. Simultaneously, the magnetic field characteristic simulation is implemented to analyze the effect of the location of tunneling magnetoresistive sensors, magnetic field intensity, and the dimension of permanent magnetic film on magnetic field sensitivity, which is beneficial for the achievement of maximum sensitivity. The micromachined z-axis tunneling magnetoresistive accelerometer fabricated by the standard deep dry silicon on glass (DDSOG) process has a device dimension of 6400 μm (length) × 6400 μm (width) × 120 μm (height). The experimental results demonstrate the prototype has a maximal sensitivity of 8.85 mV/g along the z-axis sensitive direction under the gap of 1 mm. Simultaneously, Allan variance analysis illustrate that a noise floor of 86.2 μg/Hz0.5 is implemented in the z-axis tunneling magnetoresistive accelerometer.

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