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High quality single-crystalline NiSi 2 , Ni 2 Si and Ni 31 Si 12 nanowire arrays coated with amorphous silicon dioxide were synthesized in high quantity by a nickel transport chemical vapor deposition (CVD) method. The morphological changes with various reaction temperatures, ambient pressures and reaction times, were observed and studied. At 750°C and 850°C, cone-shaped nanowire arrays were formed, composed of dense and oriented Ni 31 Si 12 and Ni 2 Si nanowires with lengths of over 60 μm. The growth mechanisms of the nickel silicide nanowires have been proposed and identified with microscopy studies. Field emission measurements show that the as-grown NiSi 2 , Ni 2 Si and Ni 31 Si 12 nanowires were of remarkable field enhancement factors, 2532, 4822 and 4099, respectively, and magnetic property measurements show ferromagnetic characteristics for the Ni 2 Si and Ni 31 Si 12 nanowires, demonstrating promising potential applications for field emitters, magnetic storage, and biological cell separation.

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