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A 1-V, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.15.3a is implemented in TSMC 0.18-pm mixed signal/RF CMOS process. With only 1V bias voltage, the LNA can achieve a measured flat power gain (S21) of 10dB from 2.5 to 8.5 GHz while consuming only 7.25 mW. The minimum noise figure is 3.46dB. A simplified Chebyshev filter is used to achieve an input broadband matching of a measured S11 < -7.1dB from 3.1 to 10.6 GHz. An output-matching buffer is designed specially to match for high gain at upper frequency, the measured S22 is <-12.5dB from 3.1 GHz to 10.6 GHz. Furthermore, the high frequency electromagnetic effect of the transmission lines is considered in this circuit.

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A 9 bands quadrature voltage-controlled oscillator (QVCO) for UWB communciation operating from 2 to 10 GHz is presented. The architecture consists of a wideband quadrature voltage-controlled oscillator (QVCO), 2-stage dividers, switch buffer and only one quadrature single-sideband (SSB) mixer.Fabricated in 0.18-pm CMOS technology, this work achieves QVCO's measured phase noise less than -98 dBc/Hz at 1 MHz offset, and the simulated output powers of twelve bands have better than 35 dB sideband rejection while consuming 58.7mW of the core circuit and 48.7mW of the buffer from a 1.8-V supply. The simulated switching time for hopping frequency is about lns.

A new design is presented that combines a low-noise amplifier (LNA) with an on-chip filter instead of external filter to eliminate image signal based on TSMC 0.18 mm CMOS technology. The fully integrated 5.9 GHz LNA exhibits 15.2 dB gain, 3.2 dB noise figure, better than 215 dB input and output return loss, and 227 dB image rejection. The circuit operates at a supply voltage of 1 V and consumes only 6.1 mW power.