Electron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding 67Zn nuclei, proving that it is a shallow, effective-mass-like donor. In addition D1 exhibits a single interaction with a H nucleus ( a(H) = 1.4 MHz), thus H is the defining element. It is in agreement with the prediction of Van de Walle [Phys. Rev. Lett. 85, 1012 (2000)] that H acts as a donor in ZnO. The concentration of D1 is 6x10(16) cm(-3) emphasizing its relevance for carrier statistics and applications.

A weak acid selective etching strategy was put forward to fabricate oxide-based hollow nanoparticles (HNPs) using core/shell nanostructures of active metal/oxide nanoparticles as sacrificial templates. ZnO-based HNPs, including pure ZnO, Au/ZnO, Pt/ZnO, and Au/Pt/ZnO HNPs with diameter below 50 nm and shell thickness below 6 nm has been first achieved at low temperature. The diameter, thickness, and even sizes of ZnO and noble metal ultrafine crystals of HNPs can be well adjusted by the etching process. Synchronous with the formation of HNPs, the internal metal-semiconductor interfaces can be controllably eliminated (Zn-ZnO) and reconstructed (noble metal-ZnO). Excitingly, such microstructure manipulation has endued them with giant improvements in related performances, including the very strong blue luminescence with enhancement over 3 orders of magnitude for the pure ZnO HNPs and the greatly improved photocatalytic activity for the noble metal/ZnO HNPs. These give them strong potentials in relevant applications, such as blue light emitting devices, environment remediation, drug delivery and release, energy storage and conversion, and sensors. The designed fabrication procedure is simple, feasible, and universal for a series of oxide and noble metal/oxide HNPs with controlled microstructure and improved performances.

The research on ZnO has a long history but experiences an extremely vivid revival during the last 10 years. We critically discuss in this didactical review old and new results concentrating on optical properties but presenting shortly also a few aspects of other fields like transport or magnetic properties. We start generally with the properties of bulk samples, proceed then to epitaxial layers and nanorods, which have in many respects properties identical to bulk samples and end in several cases with data on quantum wells or nano crystallites. Since it is a didactical review, we present explicitly misconceptions found frequently in submitted or published papers, with the aim to help young scientists entering this field to improve the quality of their submitted manuscripts. We finish with an appendix on quasi two-and one-dimensional exciton cavity polaritons.

The structure of ZnO quantum dots prepared via the wet chemical method was studied. By introducing an annealing treatment (150 °C–500 °C), we also investigated the effect of the change in the structure of the dots on their luminescence properties. Our studies revealed that the surface of the as-prepared dots is passivated by a thin layer of Zn(OH)2, thus, the dots consist of a ZnO/Zn(OH)2 core-shell structure. We present evidence that the weak excitonic transition of ZnO quantum dots is strongly correlated with the presence of the surface shell of Zn(OH)2. When Zn(OH)2 is present, the excitonic transition is quenched.

Photoluminescence study was performed on indium–oxide (INO) nanoparticles dispersed within pores of mesoporous silica, annealed at different temperatures (from 500 to 850 °C). It was found that, for the dispersed INO nanoparticles, there exists a broad luminescence band, consisting of three peaks at about 430, 480, and 520 nm, spanning the whole visible region, in contrast to the aggregates of INO nanoparticles which exhibit no luminescence. This band increases with rise of annealing temperature up to 650 °C, at which the band reaches maximum. When annealing temperature is 700 °C, the whole band redshifts and peaks at about 545 nm. Annealing at higher temperatures leads to additional redshift and decrease of the luminescence band. It has been shown that the luminescence in this study is associated with the size and the structure of the INO particles within pores of porous silica. The peaks at 430, 480, and 520 nm originate from amorphous INO particles about 2, 4, and 6 nm in diameter. The 545 nm peak is attributed to crystallized INO particles with larger size.