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CuInGaSe (CIGS) mixed-source was prepared by hydride vapor transport method (HVT). The new source synthesis method was attempted by mixing several metals such as Cu, In, Ga, and Se with 3:5:1:4 mass ratios. This mixed-source was soaked at 1090 °C for 90 min in nitrogen atmosphere. Then, the CIGS was grinded up and formed the state of powder and the CIGS pellet was made by pressure machine. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass with evaporated molybdenum layer by e-beam evaporating this CIGS pellet. For crystallization of CIGS thin film, we measured scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312), and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

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