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"Zinc oxide nanorods (ZnO NRs.) film prepared by hydrothermal method and zinc oxide film chemically coated with a trinary semiconductor (CdZnS) thin layer was investigated in this work. Optical properties include transmission, absorption spectra and energy band gaps have been tested for prepared thin films. it was observed that the absorption edge of the films after coating shifted towards higher wavelengths. Also there is a remarkable reduction in energy gap for ZnO/CdZnS film with compare to ZnO NRs. Film. The energy gap of ZnO NRs was 3.2 eV and 2.5 eV for ZnO/CdZnS film. "

This work aims to manufacture photodetectors from semiconducting bilayer materials of zinc oxide Nanorods (ZnO NRs) and coated with a thin layer of CdZnS by chemical bath deposition method (CBD). The effect of annealing time on the optical and electrical properties of the prepared devices and on the parameters of the devices was also studied. The prepared lms were thermally treated by annealing at a temperature of 200 ° C for several times for the purpose of comparison. The annealing times were 15 30 35 60 minutes, respectively, by means of a vacuum furnace. The effect of the annealing time was noticeable and obvious on the optical and electrical properties of the manufactured photodetectors.

This work aims to manufacture photodetectors from semiconducting bilayer materials of zinc oxide Nanorods (ZnO NRs) and coated with a thin layer of CdZnS by chemical bath deposition method (CBD). The effect of annealing time on the optical and electrical properties of the prepared devices and on the parameters of the devices was also studied. The prepared films were thermally treated by annealing at a temperature of 200 ° C for several times for the purpose of comparison. The annealing times were 15 30 35 60 minutes, respectively, by means of a vacuum furnace. The effect of the annealing time was noticeable and obvious on the optical and electrical properties of the manufactured photodetectors.

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