We studied the atomic layer deposition (ALD) of titanium oxide (TiO2) using a newly-developed heteroleptic titanium precursor with a linked ligand. The titanium precursor, [2-(N-methylamino) 1-methyl ethyl cyclopentadienyl] bis(dimethylamino) titanium...

No abstract

No abstract

No abstract

We report the atomic layer deposition (ALD) of silicon oxide films using a chlorine-free silylamine precursor and ozone (O3). Bis(dimethylaminomethylsilyl)-trimethylsilylamine (DTDN-2H2) containing three Si atoms was used as the precursor,...