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We obtained 17.9% cell efficiency on thin and large mc‐Si REC wafers using ECN's metal‐wrap‐through (MWT) concept. Optimization of several cell processing steps led to an increase of more than 2% absolute in cell efficiency. With these cells 36‐cell modules were manufactured at 100% yield in our industry scale module pilot line. The highest module efficiency obtained (as independently confirmed by JRC‐ESTI) was 17%. In this module the average cell efficiency was 17.8%; this shows a small difference between cell and module efficiency. Copyright © 2011 John Wiley & Sons, Ltd.

The carrier dynamics in PF6 doped polypyrrole has been probed by dielectric spectroscopy (from 10(-4) to 4 eV), down to 4.2 K. The phase-sensitive sub-THz data have assisted to resolve the discrepancies in Kramers-Kronig analysis in earlier studies. Even in metallic samples, just 1% of the carriers are delocalized, at 300 K; the fraction drops down considerably as a function of disorder, carrier density, and temperature. This subtle metallic feature and the anomalies in carrier dynamics are attributed to coherent and incoherent transport between short conjugated segments.

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Current bottlenecks for industrial application of Al2O3 deposited by Atomic Layer Deposition (ALD) on open rear passivated solar cells are low growth rate, firing stability of thin and uncapped layers, and Firing-through BSF formation during co-firing. Long term stability results on the performance of a high throughput ALD prototype , the Levitrack, are presented. Excellent passivation properties have been obtained after firing: for 12 nm thick films deposited on p-Fz (1.8 Ω.cm) a τeff of 2.2 ms (Δn=3x10 15 cm-3) was obtained that remained constant over a period of 20 weeks. Furthermore, we report on the passivation quality of the firing-through BSF and Al 2 O 3 coating as function of wafer peak temperatures between 790 and 845°C. Bifacial cells covered for 50% Al contacts resulted in local BSF thicknesses of 5 to 7 µm and FF of 78% and 77% for the best mc and mono crystalline cell respectively. For this study 12 nm uncapped aluminum oxide layers are deposited on the rear of p-type mc and mono bifacial cells. LBIC measurements confirm literature reports that uncapped Al 2 O 3 passivation in general is heavily dependent on the wafer peak temperatures during firing in the investigated range.