The variations of the low frequency noise versus temperature have been used to characterize the traps at the Si/SiO2 interface and in the depletion layer of partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors obtained from recent 0.1 μm processes. For this technology, it is shown that 1/f noise and Lorentzians do not have the same physical origin. Moreover, an additional implantation, which is performed to control the short-channel effects, is shown to increase trap densities in the depletion layer and at the Si/SiO2 interface.