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The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.

АННОТАЦИЯ В статье приводятся результаты исследований спектров электронно-парамагнитного резонанса (ЭПР) и люминесценции кристаллов кварца. Показано что в кристаллах кварца, выращенных на нейтронно-облученных затравках, наследуется наросшим слоем радиационно-наведенная β-фаза и структурные дефекты затравки. ABSTRACT The article presents the results of studies of the EPR spectra and luminescence of quartz crystals. It has been shown that in quartz crystals grown on neutron-irradiated seeds, the radiation-induced β-phase and the structural defects of the seeds are inherited by an overgrown layer.

Self-trapped hole (STH) and self-trapped exciton (STE) states which are formed in Y3AI5Ol2, Y,SiO,, and TR,Si,O, crystals under y-irradiation in the temperature interval of 77 to 200 K are investigated. The STH is shown to be molecular 0;-, absorbing a t 1.6 eV (for Y,A1501z) and a t 1.65 eV (for Y,SiO,) and causing the eleven-component EPR signal ; the corresponding S!I' E emits a t 3.9 and 3.6 eV. In metal-doped crystals the exciton and hole delocalization lead to a decreasing of the emission energy, to a short-wave shift of the absorption band, and to the growth of the anneal temperature. At the self-localization temperature excitons are proved to migrate by jump diffusion and to transfer energy to the impurity ions exciting their emission.

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