Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum Newman, R.C.; Tucker, J.H.; Semaltianos, N.G.; Lightowlers, E.C.; Gregorkiewicz, T.; Zevenbergen, I.; Ammerlaan, C.A.J. Published in:Physical Review. B, Condensed Matter DOI:10.1103/PhysRevB.54.R6803 Link to publication Citation for published version (APA):Newman, R. C., Tucker, J. H., Semaltianos, N. G., Lightowlers, E. C., Gregorkiewicz, T., Zevenbergen, I., & Ammerlaan, C. A. J. (1996). Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum. Physical Review. B, Condensed Matter, 54, R6803-R6806. DOI: 10.1103/PhysRevB.54.R6803 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Shallow thermal donors ͑STDs͒, generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared ͑IR͒ electronic absorption, have ground states that shift slightly (ϳ0.1 cm Ϫ1 ) to smaller binding energies, when deuterium is introduced instead of hydrogen, demonstrating the presence of a hydrogen atom in the donor core. No other IR spectrum is detected apart from that from neutral double thermal donors ͑TDs͒. The same optical transitions are observed in three annealed samples given a preheat treatment in water vapor. These latter samples show the NL10 electron-paramagnetic-resonance ͑EPR͒ spectrum, recently attributed to hydrogen passivated TDs. The relative strengths of the EPR NL10 spectra correlate with those of the STD IR spectra, providing a strong indication that both spectra arise from the same defects.

Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at 470 • C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated in nitrogen gas and annealed at 550 • C. Combinations of the three types of STDs can be observed in suitably treated samples. The incorporation of H and Al in STDs has been supported by electron-nuclear double-resonance measurements of the Si-NL10 electron paramagnetic resonance spectrum but the incorporation of nitrogen remains uncertain.

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Electron-paramagnetic-resonance identification of hydrogen-passivated sulfur centers in silicon Zevenbergen, I.; Gregorkiewicz, T.; Ammerlaan, C.A.J.