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Partially crystalline metallic glass Fe38Ni36B18Si8 was produced by rapidly solidifying in the form of ribbon. Chemical composition and homogeneity of the sample were determined using Scanning Electron Microscopy, equipped with energy-dispersive X-ray spectroscopy. The diffractogram exhibits a characteristic diffuse halo pattern superimposed with crystalline peaks, indicating existence of crystalline phases. The crystallization kinetics in non-isothermal conditions was studied by Differential Scanning Calorimetry. The electrical resistivity and the dimensions of samples Fe38Ni36B18Si8 were measured at room temperature. The temperature dependence of electrical resistivity was studied from 80 to 273 K. The measurements have shown a positive coefficient of electrical resistivity.

Low energy Ag ions were implanted into silicon and annealed at different temperatures in order to generate plasmonic active silicon hybrids. It was found that as the ion fluence of irradiation was increased, a monotonic decrease in the absorption spectra in the ultraviolet region occurs, due to amorphization and macrostructuring of the Si surface. At the same time, the optical spectra are characterized by a strong band after implantation presenting the contribution of the surface plasmon resonance (SPR) of Ag nanoparticles. After heat treatment at 500 and 600?C, the SPR peak shifts to lower wavelengths, as compared to as implanted samples, whereas the plasmon position shifts to higher wavelengths for annealing at 700?C. This observation can be explained by either an out-diffusion of Ag or by stress relaxation and recrystallization of silicon. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III 45005]

This paper describes the specific electric conductivity of thin films of the polymer polyaniline, depending on the type of material that is used for doping the specified polymer. In our own laboratory, there were made four series of doped samples of polyaniline thin films of which two series were doped with sulfuric acid (PANI-H2SO4), and the other two were doped with hydrochloric acid (PANI-HCl). It is also significant that two series of the mentioned samples of thin films were obtained at room temperature (20°C), and the other two at 0°C. Next, the analysis of the specific electrical conductivity of all series was performed in order to demonstrate that the material that reaches the thin film affects its electrical conductivity