Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation J.Summary Abstract: MBE GaAs regrowth with clean interfaces by arsenic passivation J. Vac. Sci. Technol. B 3, 560 (1985); 10.1116/1.583178Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs (100)

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A commercial diode laser emitting at ∼761 nm has been used to detect the absorption of individual rotational lines of the A band of atmospheric oxygen. An output signal that is proportional to the O2 partial pressure is extracted using derivative spectroscopy. The method allows measurement of O2 pressure with an uncertainty of ±1.3% of full scale (760 Torr) using a 1-ms time constant.

A system has been developed to linearize the output of most interferometric optical sensors from DC to high frequency. The system employs a broad band light source with an unbalanced MachZehnder interferometer to cancel phase changes induced by the sensor. An analog circuit is employed to produce the phase tracking signal which is linearly proportional to sensor phase. The system has demonstrated a phase resolution of 1.920 when used to track an extrinsic Fabry-Perot strain sensor. This corresponds to a strain resolution of 0.35jie. Frequency response is estimated to be greater than 100kHz for the current system and above 100MHz for an integrated optic embodiment. In addition, the system is insensitive to polarization and intensity changes induced by source drift or lead fiber perturbations.