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We have measured the transition temperature T , upper cr?tical field H 2(T) and the resistivity ab&e Tc , PT, , for thin fifms of electron beam co-evaporated Nb-Sn which were deposited as Nb3Sn at various substrate temperatures, or off-stoichiometry, or with tertiary additions of A1 or Zr. The T and Hc2 correlate with the resistivity, no matt& how the materials were made. A maximum H 2(0) of about 300 kOe pccurs when P ' I , 30 VR-cm and tge corresponding Tc ' I , 1 6 K; a d C Hc2 shows no sign of Pauli limiting.

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