CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.

The solid-state transformation phenomena of spinodal decomposition and nucleation and growth are presented as tools to create nanostructured thermoelectric materials with very low thermal conductivity and greatly enhanced figure of merit. The systems (PbTe)(1-x)(PbS)(x) and (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) are not solid solutions but phase separate into PbTe-rich and PbS-rich regions to produce coherent nanoscale heterogeneities that severely depress the lattice thermal conductivity. For x > approximately 0.03 the materials are ordered on three submicrometer length scales. Transmission electron microscopy reveals both spinodal decomposition and nucleation and growth phenomena the relative magnitude of which varies with x. We show that the (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) system, despite its nanostructured nature, maintains a high electron mobility (>100 cm(2)/V x s at 700 K). At x approximately 0.08 the material achieves a very low room-temperature lattice thermal conductivity of approximately 0.4 W/m x K. This value is only 28% of the PbTe lattice thermal conductivity at room temperature. The inhibition of heat flow in this system is caused by nanostructure-induced acoustic impedance mismatch between the PbTe-rich and PbS-rich regions. As a result the thermoelectric properties of (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) at x = 0.04, 0.08, and 0.16 were found to be superior to those of PbTe by almost a factor of 2. The relative importance of the two observed modes of nanostructuring, spinodal decomposition and nucleation and growth, in suppressing the thermal conductivity was assessed in this work, and we can conclude that the latter mode seems more effective in doing so. The promise of such a system for high efficiency is highlighted by a ZT approximately 1.50 at 642 K for x approximately 0.08.

Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ~50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi(2)S(3), Sb(2)S(3), SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi(2)S(3) dispersion phase and doped with 1.0 mol % PbCl(2) show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.