To investigate the hot electron population and the appearance of kinetic 18 instabilities in highly charged electron cyclotron resonance ion source (ECRIS), the 19 axially emitted bremsstrahlung spectra and microwave bursts emitted from ECRIS 20 plasma were synchronously measured on SECRAL-II (Superconducting ECR ion source 21 with Advanced design in Lanzhou No. II) ion source with various magnetic field 22 configurations. The experimental results show that when the ratio of the minimum 23 field to the resonance field (i.e. B min /B ecr ) is less than ~0.8, the bremsstrahlung 24 42
In order to diagnose the electron cyclotron resonance (ECR) plasma, a high-efficiency collimation system has been developed at the Institute of Modern Physics, and the bremsstrahlung spectra in the range of 10 keV–300 keV were measured on a third generation superconducting ECR ion source, SECRAL-II, with a CdTe detector. Used as a comparative index of the mean energy of the high energy electron population, the spectral temperature, Ts, is derived through a linear fitting of the spectra in a semi-logarithmic representation. The influences of some main source parameters, such as the neutral gas pressure, extraction voltage, microwave power, and bias disk voltage, on the high energy electrons are systemically investigated.
The efficiency of the microwave-plasma coupling is a key issue to enhance the performance of electron cyclotron resonance ion sources (ECRISs) in terms of higher ion beam intensity yield. The coupling properties are affected by the microwave coupling scheme, especially for the high frequency (f > 20 GHz) and high power (P > 5 kW) ECR ion sources. Based on the study of 24 GHz SECRAL ion source performances working at different launching systems, a new microwave coupling scheme, called the Vlasov launcher, is proposed, which can not only realize efficient power matching and feeding but also enhance the microwave power distribution on the ECR surface. The first promising results are presented in this article. Then, a prototype dedicated to the next generation ECRIS is described.
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