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Surface pattern formation on amorphous SiO substrates by implantation of 1.0 MeV Si ions at a current of 1.3 µA at 70° angle is reported. Surface micrometer sized ripples perpendicular to the ion beam direction are formed, observed by scanning electron microscopy and atomic force microscopy. The morphological features are more or less similar for different fluences. The formation of surface ripples at this energy is discussed in terms of ion stopping mechanisms and patterns obtained within the low- and medium-energy ranges.

The structural, electrical and optical properties of indium doped zinc oxide films, grown by spray pyrolysis are reported. The starting solution was zinc acetate diluted in a mixture of isopropyl alcohol and water to 0.1 M, the doping solution was an aqueous solution of indium nitrate. The films were grown at substrate temperatures ranging from 675 K to 800 K. X-ray diffraction and micrographs indicate that the films are polycrystalline with textured surfaces having a predominance of the (002) and (101) reflections, depending on the substrate temperature. They have a resistivity as low as 6×10−5Ω m and a transmittance better than 85% in the visible range.