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High power Ka-band power amplifiers have been developed using monolithic prematched structures utilizing power InGaAs pseudomorphic HEMT ( PHEMT ) devices. On-wafer load-pull impedance data on the structures containing 0.15 pm x 400 pm, and 0.15 pm x 1600 pm devices were obained. Based on the above information, a two stage MIC amplifier consisting of a single 1600 pm monolithic prematched structure driving four 1600 pm monolithic prematched structures was realized. The amplifier achieved an output power of 1.6 watts (32.2 dBm) with 8.

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