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Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2 and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies.Instead, the oxygen 2p states are decisive, as corroborated by DFT calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

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