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By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting Rg and Lg. While the classical method for extracting Rg and Lg uses a set of Sparameters measured under different large DC gate forward current, the proposed method uses a data set of S-parameters measured at a single low DC gate forward current. The excellent agreement between model and experimental data verify the validity of the proposed method.Index Terms -AlGaN/GaN HEMTs, parasitic elements, smallsignal equivalent circuit.

Using the wave cascading matrix formalism and the 8-term error model for modeling the imperfect measurement system vector network analyzer a new approach of the Thru-Reflect-Line (TRL) calibration technique is introduced and compared with the already existing TRL calibration technique. This new approach allows the utilization of arbitrary characteristic impedance lines as calibration elements, being very useful for high power device characterization which requires impedance transformers. The proposed algorithm differs from the classical TRL in the procedure used to refer the DUT Sparameters to the system impedance.Index Terms -Vector network analyzer (VNA), TRL calibration, characteristic impedance, wave cascading matrix.