We report Raman scattering results of wurtzite ZnS nanowires, nanocombs, and nanobelts. The Raman spectrum obtained from ZnS nanowires exhibits first‐order phonon modes at 272, 284, and 350 cm−1, corresponding to A1/E1 transverse optical, E2 transverse optical, and A1/E1 longitudinal optical phonons, respectively. Several multiphonon modes are also observed. The longitudinal optical phonon mode varies in wavenumber for nanocombs and nanobelts, indicating that the residual strain varies during the morphological change from ZnS nanowires to nanocombs and ultimately to nanobelts. Interestingly, a surface optical (SO) phonon mode varies in wavenumber depending on the shape and surface roughness of the ZnS nanostructures. The surface modulation wavelengths of the ZnS nanowires, nanocombs, and nanobelts are estimated using the SO phonon dispersion relations and the observed SO phonon wavenumbers. Copyright © 2012 John Wiley & Sons, Ltd.

In the head and neck of human mid-term foetuses, the interface between areas of endochondral ossification and adjacent membranous (intramembranous (Folia Morphol 2014; 73, 2: 199-205)

Transverse myelitis is an uncommon but well-known neurologic complication of systemic lupus erythematosus, and antiphospholipid antibodies have been implicated as having a pathogenic role of myelopathy in primary and secondary antiphospholipid syndrome. Transverse myelitis usually is monophasic, but recurrent transverse myelitis was reported in association with systemic lupus erythematosus, multiple sclerosis, and spinal arteriovenous malformations. It has been reported extremely rarely in patients with primary antiphospholipid syndrome. Herein we describe a patient with both conditions and propose that recurrent transverse myelitis should be included as a very rare feature of primary antiphospholipid syndrome.

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We grew modulated BeZnO layers by hybrid plasma-assisted molecular-beam epitaxy/electron-beam deposition. A wide band-gap investigation of the modulated Be x Zn 1-x O by means of photocurrent (PC) spectroscopy was conducted. The band-gap energy was directly acquired from the wavelength of the PC peak, caused by the band-to-band transition. By increasing x, which was the rate of the Be elements, the optical band-gap energy was empirically fitted by E BeZnO (x) = 6.32(x-1)x ? 7.305x ? 3.295. We expect that this finding can open new possibilities for wide band-gap engineering of BeZnO layers, which can be utilized as barrier layers in active layers consisting of ZnO/BeZnO quantum well structures and solar-blind ultraviolet photodetectors.