L-shell x-ray production cross sections by 0.25 -2.5-MeV 2He ions in 28Ni, »Cu, »Ge, 33AS, 37Rb 3/Sr 3QY, 40Zr, and~Pd axe reported. The data are compared to the first-Born approximation and the ECPSSR theory that accounts for the projectile energy loss (E) and Coulomb deflection (C) as vvell as the perturbed-stationary-state (PSS) and relativistic (R) effects in the treatment of the target I.-sheH electron. Surprisingly, the first Born approximation appears to converge to the data while the ECPSSR predictions underestimate them in the low-velocity limit. This is explained as the result of improper use of single-hole fluorescence yields. A heuristic formula is proposed to account for multiple ionizations in terms of a classical probability for these phenomena and, after it is applied, the ECPSSR theory of I.-shell ionization is found to be in good agreement~ith the data.

The interdiffusion of Hf and Si from high-κ gate dielectric candidate (HfO2)1−x(SiO2)x thin films deposited on Si (100) was studied using x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, high resolution transmission electron microscopy, and Rutherford backscattering spectrometry in combination with chemical etching. After extreme rapid and conventional furnace thermal annealing treatments, Hf incorporation into Si is limited to less than 0.5–1 nm from the interface. Implications for high-κ gate dielectric applications are also discussed.

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