The observation of stochastic resonance in a semiconductor distributed feedback laser is reported. Bistable modal and intensity operation is obtained using the degenerate modes of the grating. Through an observation of longitudinal-mode switching under current modulation, an enhancement in the signal-to-noise ratio of the laser’s output wavelength switching of 22 dB is measured.
We report the first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped InxGa1−xAs/GaAs multiple quantum well structure. Differential absorption of approximately 104 cm−1 is observed in the quantum wells of our test structure at saturation pump powers. Photoluminescence and time-resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.
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