J. M. Slaughter scite author profile

A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.

show abstract

Perpendicular giant magnetoresistances of Ag/Co multilayers

Pratt

et al. 1991

View full text Add to dashboard Cite

A 4-Mb toggle MRAM based on a novel bit and switching method

et al. 2005

View full text Add to dashboard Cite

Magnetoresistive random access memory using magnetic tunnel junctions

et al. 2003

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

J. M. Slaughter

Magnetoresistive Random Access Memory

Perpendicular giant magnetoresistances of Ag/Co multilayers

A 4-Mb toggle MRAM based on a novel bit and switching method

Magnetoresistive random access memory using magnetic tunnel junctions

Contact Info

Product

Resources

About