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In this study, we compared the trap density distributions, D it , in the band gap of silicon at the Si/thermal SiO 2 interface and at the bonded interface of the silicon-on-insulator structure, deduced from deep level transient spectroscopy measurements. The trap energies for the bonded Si/SiO 2 interface are localized in the range from E c -0.17 to E c -0.37 eV. The lack of the transient SiO x layer at the bonded interface is suggested to lead to a relatively narrow interval of trap energies.

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