A self-aligned GaInF'/GaAs HBT technology was used to develop a monolithic high-gain transimpedance amplifier suitable for optical communication receivers. On-wafer probe measurements revealed a gain (SZJ of 18.8 dB with a bandwidth of 13.5 GHz and input, output matching better than -8 dB. The am lifier showed a sensitivity of -15 dBm for 10 Gb/s NRZ 2 -1 pseudo-random bit sequence with a BER ofThe noise figure of the amplifier was better than 7.5 dB over the bandwidth of operation.

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