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In order to confine quasi two-dimensional electron systems (2DES) on Hgl_,Cd,Te laterally, we prepared metal-oxidesemiconductor (MOS) structures with accessory comb-shaped electrodes buried in the insulator. In these dual-stacked gate devices we can propel the electron gas from a ZDES, over a density-modulated system, to a 1 DES. Accordingly, the far-infrared spectra exhibit subband cyclotron resonances, magnetoplasmons and 1 D intersubband shifted cyclotron resonances in the three different regimes. Lateral quantization energies of the lDES of up to 9 meV are observed. We find that fixed, chargeable states at the Hgl-,Cd,Te/insulator interface play a significant role in the lateral confinement of the electron gas.