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The surface band gap of the 8) Ge(111)c(2× surface at low temperature is determined on the basis of scanning tunneling spectroscopy. Electrostatic potential computations permit evaluation of tip-induced band bending, from which a correction to the energy scale of the observed spectra is made. Parameter values in the computations are constrained by comparison of the observed spectrum with known spectral features, including high-lying conduction band features derived from first-principles computations. The surface band gap, lying between the bulk valence band maximum and the minimum of an adatominduced surface band, is found to have a width of eV 03. 0 49. 0 ± .

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