The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si͑LT-Si͒ buffer has been investigated. We have shown that a 0.1 m LT-Si buffer reduces the threading dislocation density in mismatched Si 0.85 Ge 0.15 /Si epitaxial layers as low as ϳ10 4 cm Ϫ2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.
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