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BAE Systems has developed an advanced 640 x 480 focal plane array (FPA) with a 17 µm pixel pitch. Sensitivity of 50 mK was demonstrated and the FPAs were used in imaging demonstrations. Successful scaling of BAE Systems' patented single contact per pixel, single-level microbolometer process to 17 µm pitch provides a path toward next generation microbolometer imaging systems.

A monolithic 128 x 128 InSb array is described for staring infrared imaging systems operating in the 3 -5pm spectral region. The array is fabricated with only 4 mask levels and has almost 5 times higher responsivity and nearly 14 times greater wafer yield as compared to a previous design. The higher responsivity has resulted in demonstration of significantly improved thermal imagery.

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Spatial light modulators (SLM) are utilized in systems which compensate for distortion of a laser beam caused by transmission through a distorting medium. The Northrop Grumman linear beam cleanup system [1] uses an SLM to modify the phase front of the input beam to cancel the phase changes produced along the transmission path. At longer wavelengths these phase changes may not be achievable with current liquid crystal or lead lanthanum zirconate titanate (PLZT) modulators. High laser power levels may also produce adverse effects in these materials if operated in transmission mode. The silicon SLM (Si-SLM) produces a phase change by reflection of the laser from the surface of moveable pixels. The all silicon construction of the Si-SLM reduces the effects of temperature changes on the flatness of the reflecting surface.