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Articles you may be interested inAtomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell J. Vac. Sci. Technol. A 31, 01A125 (2013); 10.1116/1.4767837 Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition J. Vac. Sci. Technol. A 28, 515 (2010); 10.1116/1.3425640Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient Properties of aluminum-doped zinc oxide films deposited by high rate mid-frequency reactive magnetron sputtering J.Transparent conducting films of cadmium stannate (Cd 2 Sn0 4 ), zinc oxide, and aluminum-doped zinc oxide have been made by a simple, economical e1ectroless deposition technique. The asdeposited films of cadmium stannate have a 75% transmittance in the visible, 48% reflectance in theIR, and a band gap of2.7 eV. Its resistivity is -10-1 f} cm. Vacuum annealing changes the transmittance in the visible range to 82%, the IR reflectance to 62%, and the band gap to 3.1 eV. The correspondiing values for the hydrogen-annealed films are 87%,76%, and 3.2 eV. Annealing lowers the resistivity of the films to _10-2 and _10-3 f} cm for vacuum and hydrogen-annealed films, respectively. The undoped zinc oxide films have transmittance in the visible and reflectance in the IR of 80 and 67% respectively. Aluminum doping increases the transmittance to 88% and reflectance to 83%. The optical band gap of un doped and aluminum-doped zinc oxide films are found to be 3.40 and 3.98 eV, respectively. The resistivity is 1.20X 10-2 and 6.0X 10-2 {l cm for un doped and aluminum-doped ZnO films. Vacuum annealing reduces the resistivity of the films to 2.5X 10-3 and 2.1 X 10-4 f} cm for undoped and aluminum-doped ZnO films, respectiVely.

Boron nitride and titanium oxide composite (BN–TiO2) photocatalyst endowed with high specific surface area and large pore size was synthesized by ice bath method.

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