No abstract

No abstract

To eliminate material loss during photolithographic processes in Thin Film Transistor production three different Molybdenum materials have been investigated. Galvanic corrosion behavior was investigated by measuring Evans diagrams in contact with Copper. Results have shown that it is of crucial importance that a Mo material contains a passivating element in a proper concentration to form a stable passive layer to avoid attack caused by the electrolyte. Also water content of the electrolyte plays an important role for material behavior.