The authors report low-temperature preparation of Pb(Zr0.6,Ti0.4)O3 (PZT) thin films below 300°C using SrTiO3 seed layers on (111)Pt∕IrO2∕SiO2∕(001)Si substrates by metal-organic chemical vapor deposition. The critical parameters contributing low-temperature preparation for PZT were crystallinity and orientation of SrTiO3 seeds and deposition rate of PZT films. Using 1–2nm of SrTiO3 with (h00) and (hh0) mixed orientations, polycrystalline PZT films could be obtained at 290°C with deposition rate of 0.5–1.0nm∕min. The remanent polarization (2Pr) and coercive field (2Ec) of PZT films on SrTiO3 seeds with deposition rate of 0.5nm∕min were 42.4μC∕cm2 and 256kV∕cm, respectively.

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The synthesis of the perovskite Pb (Mg1/3Nb2/3)O3 powder by the emulsion method was investigated. Pb(NO3)2, Mg(NO3)2•E6H2O, and Nb(HC2O4)5• nH2O were used as starting materials. Span 80, kerosene and paraffin oil were used to prepare organic phase. Finely dispersed emulsions of mixed solution were prepared with the organic phase and dried using the petroleum drying method. Emulsion size distribution was in the range of 0.7-4.0ƒÊm. Mean particle size of powders as-dried at 170•Ž and calcined at 800•Ž was 0.4 and 0.3ƒÊ m, respectively. A single phase of perovskite was obtained by calcination of as-dried powders at 800•Ž for 2h. The sintered body of emulsion-derived PMN at 1100•Ž showed a dielectric permittivity of over 11000.

The ferroelectric PbTiO 3 PT thin films were deposited on MgO100 and Si001 substrates by Liquid Source Mist Chemical Vapor Deposition LSMCVD method. The PbDPM 2 and TiiOC 3 H 7 4 TTIP were used as metal sources. Metal-organic sources were dissolved in 2-metoxyethanol. The PT thin films have h00 and 00l preferred orientations at lower metal source concentrations on MgO100 substrate. The epitaxial PT thin film could be prepared on MgO100 substrate at 0.02 molL solution at 600c C. The epitaxial PT thin films having stoichiometric composition and smooth surfaces were prepared on MgO100 substrates. In this study, the solution concentration is an important process parameter to fabricate epitaxial PT thin films. The PT thin films which have polycrystalline phases on Pt111TiO 2 SiO 2 Si001 showed about 320 of dielectric constants and 3uCcm 2 of remanent polarization with 109.54 kVcm of coercive field.