Recently, the concept of topological insulators has been generalized to topological semimetals, including three-dimensional (3D) Weyl semimetals, 3D Dirac semimetals, and 3D node-line semimetals. In particular, several compounds (e.g., certain three-dimensional graphene networks, Cu3PdN, Ca3P2) were discovered to be 3D node-line semimetals, in which the conduction and the valence bands cross at closed lines in the Brillouin zone. Except for the two-dimensional (2D) Dirac semimetal (e.g., in graphene), 2D topological semimetals are much less investigated. Here, we propose the new concept of a 2D node-line semimetal and suggest that this state could be realized in a new mixed lattice (we name it as HK lattice) composed by kagome and honeycomb lattices. We find that A3B2 (A is a group-IIB cation and B is a group-VA anion) compounds (such as Hg3As2) with the HK lattice are 2D node-line semimetals due to the band inversion between cation s orbital and anion pz orbital. In the presence of buckling or spin-orbit coupling, the 2D node-line semimetal state may turn into 2D Dirac semimetal state or 2D topological crystalline insulating state.

Previous studies showed that, as ferroelectric films become thinner, their Curie temperature (T_{c}) and polarization below T_{c} both typically decrease. In contrast, a recent experiment [Chang et al., Science 353, 274 (2016)SCIEAS0036-807510.1126/science.aad8609] observed that atomic-thick SnTe films have a higher T_{c} than their bulk counterpart, which was attributed to extrinsic effects. We find, using first-principles calculations, that the 0-K energy barrier for the polarization switching (which is a quantity directly related to T_{c}) is higher in most investigated defect-free SnTe ultrathin films than that in bulk SnTe, and that the 5-unit-cell (UC) SnTe thin film has the largest energy barrier as a result of an interplay between hybridization interactions and Pauli repulsions. Further simulations, employing a presently developed effective Hamiltonian, confirm that freestanding, defect-free SnTe thin films have a higher T_{c} than bulk SnTe, except for the 1-UC case. Our work, therefore, demonstrates the possibility to intrinsically enhance ferroelectricity of ultrathin films by reducing their thickness.

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Reprinted with permission from the American Physical Society: Guo, J. W., Wang, P. S., Yuan, Y., He, Q., Lu, J. L., Chen, T. Z., Yang, S. Z., Wang, Y. J., Erni, R., Rossell, M. D., Gopalan, V., Xiang, H. J., Tokura, Y. Yu, P. (2018). Strain-induced ferroelectricity and spin-lattice coupling in SrMnO3 thin lms. Physical Review B 97(23): 235135 c 2018 by the American Physical Society. Readers may view, browse, and/or download material for temporary copying purposes only, provided these uses are for noncommercial personal purposes. Except as provided by law, this material may not be further reproduced, distributed, transmitted, modied, adapted, performed, displayed, published, or sold in whole or part, without prior written permission from the American Physical Society.Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.