The plasma parameters in ICP-CVD system with internal low inductance antennas (LIA) were diagnosed by Langmuir probe. The ions density (Ni) reached 10 11-10 12 cm −3 , and the electron temperature (Te) was below ca. 2 eV, which was slightly decreased with applied power. A p-type hydrogenated microcrystalline silicon (µc-Si:H) film was prepared on glass substrate. After optimization of the processing parameters in flow ratio of SiH4:B2H6:H2, a high quality µc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.

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