We studied oxygen incorporation into ZnTe thin films with oxygen ambient and oxygen plasma during pulsed laser deposition (PLD). The ZnTe layers deposited by oxygen-plasma-assisted PLD under oxygen partial pressures showed the enhancement of visible absorption due to TeO
x
formation by oxygen incorporation, which was confirmed by X-ray photoelectron spectroscopy measurement. The ZnTe:O thin films grown under oxygen ambient and plasma produced an energy band structure at about 0.5–0.8 eV below the ZnTe band edge, indicating strong radiative properties. The ZnTe:O samples showed the formation of intermediate bands and p-type semiconducting characteristics, which will be useful for intermediate/defect band solar cells.
Fe-diluted Si alloys grown on p-type Si (100) substrates by pulsed-laser deposition method were studied for tructural, electrical, and magnetic properties. The X-ray diffraction patterns for these alloy samples showed a few of peaks with cubic structures such as FeSi, The manipulation of electron spin in semiconductors with transition metals is very important.The efficiency of electron spin injection is still deficient in major problems as low as a few % for the realization of spin field effect transistors, which is contributed by the conductance mismatch of junctions between metal and semiconductor. Diluted magnetic semiconductor (DMS) is known to be a useful way to
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