Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation Schuette, Daniel R. et al. "Hybridization process for backilluminated silicon Geiger-mode avalanche photodiode arrays." Advanced Photon Counting Techniques IV.

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We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.

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