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Metal-oxide-semiconductor (MOS) capacitors with Co nanoparticles (Co NPs) were successfully fabricated by utilizing an external laser irradiation method for the application of nonvolatile memory. Experimental images of cross-sectional transmission electron microscopy showed that the Co NPs of 5nm in diameter were clearly embedded in SiO2 layer. Capacitance-voltage measurements of Pt∕SiO2∕Co NPs∕SiO2 on p-type Si (100) substrate certainly exhibited typical MOS behavior with a flatband voltage shift of 1.1V. In addition, the charge retention characteristics of MOS capacitors with the Co NP were investigated using capacitance-time measurements. The present results indicate that their unique laser process gives rise to a possible promise for the efficient formation or insertion of metal NPs inside the MOS structures.

Construction process is divided into pre-design and planning, design, construction, management. Pre-design stage is very important considering the influence on other subsequent works. Recently, it is being increased that the importance of information management and decision-making support at the pre-design stage, and related researches are being conducted. As part of this trend, the purpose of this study was to develop the interoperability of decision-making support system at the pre-design stage. It is tested that interoperability to detailed design of the existing system. As a result, shape information of the building was compatible exactly, but property information was not compatible. Through future studies about improving these problems and interlocking between this system and modeling tools, it will be supported decision-making of various project participants.

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