Factor analysis of a large number of motion sickness self-reports from exposure to military flight simulators revealed three separate clusters of symptoms. Based on this analysis a symptom profile emerged for simulators where Oculomotor symptoms predominated, followed by Nausea and least by Disorientation-like symptoms. Current users of virtual environment (VE) systems have also begun to report varying degrees of what they are calling cybersickness, which initially appeared to be similar to simulator sickness. We have found, after examination of eight experiments using different VE systems, that the profile of cybersickness is sufficiently different from simulator sickness — with Disorientation being the predominant symptom and Oculomotor the least. The total severity of cybersickness was also found to be approximately three times greater than that of simulator sickness. Perhaps these different strains of motion sickness may provide insight into the different causes of the two maladies.

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Volcanic ash ingested by jet engines can damage conventional Y2O3‐stablized ZrO2 thermal barrier coatings (TBCs) used to protect engine parts in the hot section. Newer TBCs, one based on Gd2Zr2O7 and another composed of ZrO2 solid solution containing Y2O3, Al2O3, and TiO2, are found to be highly resistant to such damage from Eyjafjallajökull volcano ash. Photo courtesy of Peter Greenfield.

The current method of growing large-area graphene on polycrystalline Cu surfaces (foils or thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces.Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire (α-Al 2 O 3 (0001)) substrates for transfer to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer. ________________ * Electronic

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