We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metallic islands. The other one relies on a purely electronic mechanism: the formation of an electron Coulomb glass in the granular metal. More selective experiments and/or quantitative predictions about the Coulomb glass properties are still needed to definitely distinguish between the two scenarii.

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Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm