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The successful fabrication of commodity 64 Mb DRAM chips and logic device and circuits on patterned SO1 wafers is reported for the first time. The effect of SIMOX implantation and annealing on DRAMS in patterned SO1 wafers is studied.Excellent yields and comparable performance of DRAM in bulk regions of the patterned SO1 wafers are observed. The logic devices in the adjacent SO1 area of the patterned wafer show the expected enhanced drive current. This approach enables SO1 based embedded DRAM.

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