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We propose and demonstrate a type of high-performance transverse magnetic (TM) multimode interferometer (MMI) in Z-cut thin film lithium niobate (TFLN). Both 1 × 2 and 4 × 4 MMI designs are demonstrated. Simulation results show that the insertion losses (ILs) are nominally about 0.157 and 0.297 dB for the 1 × 2 and 4 × 4 MMI, respectively, with wide fabrication tolerances. Based on the designed structure, the MMIs are fabricated using an argon based induced coupled plasma (ICP) etching method in Z-cut TFLN. The measured ILs are 0.268 and 0.63 dB for these two kinds of devices. The presented TM mode MMI featuring compact size and low loss can be used for both multifunctional devices and on-chip integrated circuits on a Z-cut TFLN platform.

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We demonstrate millimeters-long VCSEL linear arrays with SU-8 epoxy-based microlenses that are directly patterned and cross-linked on the output apertures by a simple, photoacid-diffusion-aided photolithography technique. The linear arrays are capable of delivering >7 W of peak pulsed output power. By exploiting the photoacid diffusion effect, it is possible to produce a range of microlens structures with height and radius of curvature ranging from approximately ten to tens of microns. Simulation and experimental results show that the far-field beam divergence can be reduced by a factor of up to 7 in VCSELs integrated with optimal microlens dimensions.