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We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. © 2013 Elsevier B.V. All rights reserved

We consider a Markov-modulated fluid flow queueing model under D-policy. As soon as the fluid level reaches zero, the server becomes idle. During the idle period, fluid arrives from outside according to an underlying continuous time Markov chain (UMC) and the idle server does not process the fluid. We consider two increase patterns of fluid during the idle period: vertical increase (Type-V) and linear increase (Type-L). The idle server is reactivated only when the cumulative fluid level in the system exceeds a predetermined threshold value D. We derive the distributions of fluid level and mean performance measures for both types. We also present cost optimization model to minimize average operating cost per unit time. A MARKOV-MODULATED FLUID FLOW QUEUEING MODEL UNDER D-POLICY à . P is used to compute performance measures by using uniformization technique. In the analysis of MMFF-related processes, first passage times play important roles. Let .x/ D i nf ft > 0, U.t/ D xg be the first passage time to level x. Let us define the following Laplace-Stieltjes transforms (LST), ‰ .Â/ ij D EOEe  .0/ , J. .0// D j jU.0/ D 0, J.0/ D i, .i 2 = 1 , j 2 = 2 /, G 12 .Âjx/ ij D EOEe  .0/ , J. .0// D j jU.0/ D x, J.0/ D i, .i 2 = 1 , j 2 = 2 /,

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