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The Rosencwaig-Gersho theory of photoacoustic spectroscopy has been expanded into the two-layer model and the photoacoustic signal in the multi-layer model has been deduced from its approximations in special cases. Furthermore, the photoacoustic signal is discussed considering multi-reflection of the light in a sample. This calculation accounts for the interference effect on photoacoustic signals. As an example, the interference theory was applied to a sample of silicon on sapphire (SOS), which showed considerable effect of interference.

The anodic film growth on GaAs during the anodization process and the dissolution of the grown film in the open-circuit condition have been observed with the in situ differential reflectance technique. It is shown that the dissolution curve of the grown film is useful in characterization of the film rather than the anodization curve. The anodic process in the open-circuit transient region is discussed.

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