Resistivities, carrier concentrations, optical absorption, and photoluminescences of undoped and Cd,Zn-doped CuAlSe2 single crystals grown by chemical vapor transport were studied. The electrical and optical properties were almost unchanged after annealing under Se pressure. However, the resistivity increased about seven orders of magnitude after annealing in vacuum. The resistivity also increased by Cd or Zn doping. The samples showed p-type conduction even when Cd or Zn was doped. An acceptor ionization energy of about 65 meV was obtained. The mobility showed the dominance of lattice scattering for temperatures between 80 and 200 K. Two independent, broad, red luminescences having their own excitation energies were observed at relatively low temperature. We have proposed the configuration coordinate model for this characteristic emission. The emission can be interpreted as radiative transitions from a deep center to the respective A or C valence bands, accompanied by a lattice relaxation.

State$, wr Be Commisslo n, nor any per son tc Ung on behalf of the Com m.108 1 on: A. Makes any warranty or repres entatton, expres Bed or impU ed, Mth res peet to the accuracy , comple tene 03, or use fulnen of the information contained li thi s report, or that the uae of any /nformation , apparatua, method, or Procesa disclosed In thint rpry,rt mni, "04 1.06 6 u prly*ty owned rluh.; .r B. Assumes any Uabilittes with reepect to the use 01, or for damages re/ulting from the m of Hy idormation. applaratum , melhod, or procm dleclosed M this reporL As used in the above, "perion acting on bebalf of the Commission " includea any employee or contractor of Lhe Commisai on, or uployee of auch contractor, to me extent uit MA ST ER such employee or cor.tractor of the Comm188 ton, or employee of such contracir prepares, dIsseminat es, or provideB accesi to, Any information purBuant to his employmen t or contract with me Commillon , or his employme nt with auch contractor .

No abstract

No abstract